semiconductor junction
英 [ˌsemikənˈdʌktə(r) ˈdʒʌŋkʃn]
美 [ˈsemikəndʌktər ˈdʒʌŋkʃn]
网络 半导体连接
双语例句
- Constant Temperature Control of Semiconductor Laser Based on Temperature Characteristics of pn Junction
采用半导体激光器自身pn结特性测温的半导体激光器恒温控制 - Trench capacitors based on semiconductor pn junction capacitance
利用半导体pn结结电容构成的沟道式电容器 - According to the nonlinear re-radiation characteristic of semiconductor PN node, the nonlinear node detection system for semiconductor junction targets based on second harmonic reception is designed.
根据非线性半导体PN结再辐射特性，设计了一种基于二次谐波接收的非线性节点探测系统。 - Semiconductor junctions have a "reverse breakdown voltage" at which a reverse-biased junction begins to conduct.
当反向偏置形成时，半导体的连接点会有反向击穿电压。 - Interlayer Exchange Coupling in Ferromagnet/ Insulator ( Semiconductor)/ Ferromagnet Tunnel Junction
铁磁体/绝缘体（半导体）/铁磁体型隧道结中的层间交换耦合 - The critical currents of superconductor, semiconductor and superconductive junction are influenced by the external magnetic field when an external magnetic field exists.
当外加磁场时，超导体/半导体/超导体结的临界电流受外加磁场的影响。 - A new explanation to the cathodic process of silver(ⅱ) oxide with the concept of semiconductor high-low junction
用半导体高-低结概念对氧化银（Ⅱ）阴极过程所作的一种新解释 - Beam Quality of Semiconductor Laser Cascaded by Tunnel Junction
隧道级联半导体激光器的光束质量因子 - An experimental research of the voltage-temperature characteristics of semiconductor pn junction
半电体PN结电压&温度特性的实验研究 - The Amorphous Semiconductor Silicon p-n Junction
非晶态半导体硅p-n结 - The present paper covers the junction voltage saturation characteristic of the semiconductor lasers and the experimental result about the relation between reliability and junction voltage saturation characteristic in the semiconductor lasers.
本文讨论了半导体激光器的结电压饱和特性，并给出了其可靠性和结电压饱和特性关系的实验结果。 - In this paper, according to the continuity of carrier profile, a method of calculating the carrier profile of a semiconductor n& n junction has been obtained, by solving the Poisson equation self-consistently.
根据载流子分布的连续性，由泊松方程自洽求解，得出了半导体n~-－n结势垒分布的计算方法。 - Discussion on contact potential of a semiconductor pn junction
对半导体pn结接触电势的一个讨论 - Based on the theory of waveguide mode and the theory of non-paraxial vectorial moment, the beam quality of TE 0 mode propagating in InGaAs/ GaAs/ AlGaAs semiconductor laser cascaded by tunnel junction is studied.
运用波导模式理论和光束传输的非傍轴矢量矩理论，对隧道级联InGaAs/GaAs/AlGaAs半导体激光器的光束质量进行了理论研究。 - The formation and measurability of built in electrical field and contact potential in a semiconductor pn junction are discussed, and a paradox that students usually raised is answered.
讨论了半导体pn结内建电场和接触电势的形成与可测性，回答了在半导体物理学pn结内容教学中学生经常会提出的一个似是而非的问题。 - DC Josephson Current of Superconductor/ semiconductor/ superconductive Junction in External Field
外场中超导体/半导体/超导体结的直流Josephson电流 - It is explained from both thermodynamics and metal semiconductor contact points of view why a pn junction cannot output voltage or current at a thermal equilibrium condition ( under a zero bias).
从热力学第一定律、金属-半导体接触等不同角度详细解释了热平衡（零偏下）时pn结不可能对外输出电压和电流的原因。 - Cold End Compensating to General Thermocouples Based on Temperature Characteristic of the Semiconductor PN Junction
基于晶体管PN结温度特性的热电偶冷端补偿 - The Luminescence of Wide-gap Semiconductor of Zinc Oxide Films and Its p-n Junction Properties
氧化锌宽禁带半导体薄膜的发光及其p-n结特性 - By means of this property, the connect lines, P-type semiconductor or N-type semiconductor, P-N junction, and 2D and 3D integrated circuit connection can be made.
利用这个特性，可制作导电图样，制作连线，制作P型半导体材料和N型半导体材料，制作PN结，制作二维和三维集成电路互连接。 - A convenient device to determine the Boltzman constant by making use of the characters of the semiconductor P and n junction
用半导体PN结特性测定玻耳兹曼常数的一个简单装置 - This article paper how to use the linearity of index multimeter's non-linear resistance grade. It states that you should analyze semiconductor PN junction's V-A characteristics when measuring semiconductor devices.
分析了指针式万用表非线性的电阻档的线性利用，指出了测量半导体器件应从半导体PN结的伏安特性角度去分析； - Realization of fuzzy logic controller for THERMAUTOSTAT with semiconductor p-n junction cooler by bidirectional regulating
半导体致冷堆双向调节恒温模糊逻辑控制器的实现 - The conflicting between on-resistance and breakdown voltage is one of the core problem in power semiconductor devices. Super Junction ( SJ) technology has a wide of application prospect in the traditional power IC due to the break of the limit relationship of on-resistance and breakdown voltage.
导通电阻和击穿电压的矛盾是功率半导体器件的核心矛盾之一，超结技术的出现，打破了传统功率器件导通电阻与击穿电压的极限关系，在功率集成电路中具有广泛的应用前景。 - In this paper, structural parameters on the electrical exploding and safety performance of semiconductor junction bridge are theoretical analysed and four different shape and size of the bridge area, two doped semiconductor junction bridges are designed.
本文通过理论分析结构参数对结型半导体桥电爆性能以及安全性能的影响规律，设计制作了四种不同桥区形状尺寸、两种掺杂浓度的结型半导体桥。 - It is requested temperature of diffuse gas at 20 ℃(± 0.1 ℃) during semiconductor PN junction production process.
在半导体PN结器件生产过程中，要求扩散气体恒温在20℃（±0.1℃）。 - By doping donor element in the film, P-type semiconductor film will be achieved, and this is quite essential for the development of semiconductor materials with P-N junction.
而通过在薄膜中掺杂受主元素，可以获得P型半导体薄膜，从而对于发展具有P-N结结构的半导体材料有重大帮助。 - N-type semiconductor thin film is deposited on p-type CIGS absorber layer to form p-n junction to separate light-excited carriers.
为了与p型的CIGS吸收层形成p-n结从而分离光生载流子，需要在其表面制备一层n型半导体薄膜。 - The sensing mechanisms can be summarized as the same type of semiconductor heterojunction model, p-n junction model and catalytic model etc.
其气敏机理可归结为半导体同型异质结模型、p-n结模型、催化剂模型等。 - Then, the key factors of blocking voltages, current gain, frequency response and power loss were analyzed by combining semiconductor physics and semiconductor device physics, together with Junction Termination Technology ( JTT), device design principles.
进而，根据半导体物理及半导体器件设计原则着重分析了影响器件击穿电压、电流增益、频率响应的主要因素，结合结终端技术分析和器件设计要点，设计一种新结构。